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IPD60R650CE

Marking:60S650CE;Package:PG-TO252;600V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPS60R650CE

Marking:60S650CE;Package:PG-TO251;600V CoolMOS짧 CE Power Transistor

600VCoolMOSªCEPowerTransistor Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEos •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Applications   PFCstages,hardswitching

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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