IPS60R650CE芯片丝印丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPD60R650CE	文件：1.22369 Mbytes Page：16 Pages	丝印：60S650CE；Package：PG-TO252；600V CoolMOS짧 CE Power Transistor Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications 文件：1.22369 Mbytes 页数：16 Pages	INFINEON 英飞凌	INFINEON
IPS60R650CE	文件：969.78 Kbytes Page：13 Pages	丝印：60S650CE；Package：PG-TO251；600V CoolMOS짧 CE Power Transistor 600V CoolMOSª CE Power Transistor Features • Extremely low losses due to very low FOM Rdson*Qg and Eos • Very high commutation ruggedness • Easy to use/drive • Pb-free plating, Halogen free mold compound • Qualified for standard grade applications Applications PFC stages, hard switching 文件：969.78 Kbytes 页数：13 Pages	INFINEON 英飞凌	INFINEON
60S650CE	文件：969.78 Kbytes Page：13 Pages	600V CoolMOS짧 CE Power Transistor 600V CoolMOSª CE Power Transistor Features • Extremely low losses due to very low FOM Rdson*Qg and Eos • Very high commutation ruggedness • Easy to use/drive • Pb-free plating, Halogen free mold compound • Qualified for standard grade applications Applications PFC stages, hard switching 文件：969.78 Kbytes 页数：13 Pages	INFINEON 英飞凌	INFINEON

更多60S650CE供应商更新时间2026-1-17 15:01:00