丝印：61；Package：SOT-143；Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz)

Silicon PIN Diodes ● RF switch ● RF attenuator for frequencies above 10 MHz

文件：77.85 Kbytes 页数：4 Pages

SIEMENS

西门子

丝印：61；Package：SOD523；Small-Signal Fast Switching Diodes

VR 100V Ifav 250mA

文件：1.86261 Mbytes 页数：3 Pages

RFE

RFE international

丝印：61；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：61；Package：TSOT-6L；Isolated output programmable Hall Effect Latch/Switch/Omnipolar switch

Features Normal or lateral magnetic sensitivity options X,Y,Z Switch output – fully isolated from the supply voltage, OUTA/OUTB potentials can be below GND or above VDD Typical RON of 3Ω Output current up to 100mA (AMR 200mA) Programmable magnetic thresholds and threshold temperature coef

文件：795.62 Kbytes 页数：18 Pages

MELEXIS

迈来芯

丝印：61；Package：SC-74；40 V NPN low VCEsat (BISS) transistor

Features * Ultra low collector-emitter saturation voltage VCEsat * 4 A continuous collector current capability IC (DC) * Up to 15 A peak current * Very low collector-emitter saturation resistance * High efficiency due to less heat generation

文件：303.44 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：61；Package：SOT457；40 V NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5440D-Q 2. Features and benefits • Ultra low collector-emitter saturation voltage VCEsat • 4 A continuous collector current capability IC (DC) • Up to 15 A peak current • Very low

文件：298.86 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：61；Package：WDFN-8SL；3A, 1.2MHz, 6V Synchronous Step-Down Converter In WDFN-8L 2x2

General Description The RT5753A/B/C/D is a simple, easy-to-use, 3A synchronous step-down DC-DC converter with an input supply voltage range from 2.5V to 6V. The device builds in an accurate 0.6V reference voltage and integrates low RDS(ON) power MOSFETs to achieve high efficiency in WDFN-8L

文件：972.79 Kbytes 页数：28 Pages

RICHTEK

立锜科技

丝印：61；Package：SON(DRB)；TPS54061 Wide Input 60-V, 200-mA Synchronous Step-Down DC-DC Converter With Low IQ

1 Features 1• Integrated High-Side and Low-Side MOSFET • Diode Emulation for Improved Light Load Efficiency • Peak Current Mode Control • 90-μA Operating Quiescent Current • 1.4-μA Shutdown Supply Current • 50-kHz to 1100-kHz Adjustable Switching Frequency • Synchronizes to External Clock

文件：1.95188 Mbytes 页数：40 Pages

TI

德州仪器

丝印：61；Package：SON(DRB)；TPS54061 Wide Input 60-V, 200-mA Synchronous Step-Down DC-DC Converter With Low IQ

1 Features 1• Integrated High-Side and Low-Side MOSFET • Diode Emulation for Improved Light Load Efficiency • Peak Current Mode Control • 90-μA Operating Quiescent Current • 1.4-μA Shutdown Supply Current • 50-kHz to 1100-kHz Adjustable Switching Frequency • Synchronizes to External Clock

文件：1.95188 Mbytes 页数：40 Pages

TI

德州仪器

丝印：61；Package：SON(DRB)；TPS54061 Wide Input 60-V, 200-mA Synchronous Step-Down DC-DC Converter With Low IQ

1 Features 1• Integrated High-Side and Low-Side MOSFET • Diode Emulation for Improved Light Load Efficiency • Peak Current Mode Control • 90-μA Operating Quiescent Current • 1.4-μA Shutdown Supply Current • 50-kHz to 1100-kHz Adjustable Switching Frequency • Synchronizes to External Clock

文件：1.95188 Mbytes 页数：40 Pages

TI

德州仪器