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IPAN60R210PFD7S

Marking:60S210D7;Package:PG-TO220;MOSFET 600V CoolMOSª PFD7 SJ Power Device

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •LowswitchinglossesEoss,excellentthermalbehavior •Fastbodydiode •WiderangeportfolioofRDS(on)andpackagevariations Benefits •Enableshighpowerdensitydesignsandsmallformfactors •Enables

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD60R210PFD7S

Marking:60S210D7;Package:PG-TO252-3;600V CoolMOSª PFD7 SJ Power Device

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •LowswitchinglossesEoss,excellentthermalbehavior •Fastbodydiode •WiderangeportfolioofRDS(on)andpackagevariations

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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