IGLD60R190D1S

Marking：60S190D1；Package：PG-LSON-8-1；600V CoolGaN™ enhancement-mode Power Transistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforstandardgradeapplicationsaccordingtoJEDEC Standards

IGT60R190D1S

Marking：60S190D1；Package：PG-HSOF-8-3；600V CoolGaN??enhancement-mode Power Transistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforstandardgradeapplicationsaccordingtoJEDECstandards