IGLD60R190D1S中文资料英飞凌数据手册PDF规格书

特性 Features

 Enhancement mode transistor – Normally OFF switch

 Ultra fast switching

 No reverse-recovery charge

 Capable of reverse conduction

 Low gate charge, low output charge

 Superior commutation ruggedness

 Qualified for standard grade applications according to JEDEC

Standards

Benefits

 Improves system efficiency

 Improves power density

 Enables higher operating frequency

 System cost reduction savings

 Reduces EMI

Applications

Consumer SMPS and high density chargers based on the half-bridge topology

(half-bridge topologies for hard and soft switching such as Totem pole PFC,

high frequency LLC and flyback).

For other applications: review CoolGaN™ reliability white paper and contact

Infineon regional support