丝印：60A099DM9；Package：H2PAK-2；Automotive-grade N-channel 600 V, 76 mΩ typ., 27 A MDmesh DM9 Power MOSFET in an H²PAK-2 package

Features • AEC-Q101 qualified • Fast-recovery body diode • Worldwide best RDS(on) per area among silicon-based fast recovery devices • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely dv/dt ruggednes • Excellent switching performance thanks to the ex

文件：737.38 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体