丝印：60C；Package：SMAF；Surface mount transient voltage suppressor power 400 watts

FEATURES For surface mounted applications in order to optimize board space. Low profile package Glass passivated junction Low inductance Plastic package has Underwriters Laboratory Flammability

文件：1.10473 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：60C；Surface mount transient voltage suppressor power 200 watts

文件：1.51236 Mbytes 页数：5 Pages

JUXING

广东钜兴电子

丝印：60C；Package：SMAF；Surface mount transient voltage suppressor power 200 watts

文件：1.51387 Mbytes 页数：5 Pages

JUXING

广东钜兴电子

丝印：60C7180；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor

Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

文件：1.14682 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：60CA；Package：DO-214AC；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Glass passivated junction Low inductance Excellent clamping capability 400W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01% Fast response time Typical

文件：873.39 Kbytes 页数：7 Pages

SY

顺烨电子

丝印：60CA；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability 600W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01% Fast

文件：874.38 Kbytes 页数：7 Pages

SY

顺烨电子

丝印：60CA；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor

Features ● For surface mounted applications ● Low-profile package ● Ideal for automated placement ● Available in Unidirectional and Bidirectional ● 200 W peak pulse power capability with a 10/1000 μs waveform ● Low incremental surge resistance, excellent clamping capability ● Very fast re

文件：1.26738 Mbytes 页数：4 Pages

SAMYANG

三阳电子

丝印：60C7040；Package：PG-TO263；600V CoolMOS짧 C7 Power Transistor

文件：1.21537 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60C7060；Package：PG-TO263；CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

文件：1.3995 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：60C7099；Package：PG-TO263；600V CoolMOS짧 C7 Power Transistor

文件：1.21091 Mbytes 页数：14 Pages

Infineon

英飞凌