SMAF60C

Marking：60C；Package：SMAF；Surface mount transient voltage suppressor power 400 watts

FEATURES Forsurfacemountedapplicationsinorderto optimizeboardspace. Lowprofilepackage Glasspassivatedjunction Lowinductance PlasticpackagehasUnderwritersLaboratory Flammability

SMAF60C

Marking：60C；Surface mount transient voltage suppressor power 200 watts

SMAF60C

Marking：60C；Package：SMAF；Surface mount transient voltage suppressor power 200 watts

IPA60R180C7

Marking：60C7180；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor

Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

SMAJ85CA

Marking：60CA；Package：DO-214AC；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Glasspassivatedjunction Lowinductance Excellentclampingcapability 400Wpeakpulsepowercapabilityat10/1000μswaveform, repetitionrate(dutycycle):0.01% Fastresponsetime Typical

SMBJ160CA

Marking：60CA；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Built-instrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 600Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0.01% Fast

SMF60CA

Marking：60CA；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor

Features ●Forsurfacemountedapplications ●Low-profilepackage ●Idealforautomatedplacement ●AvailableinUnidirectionalandBidirectional ●200Wpeakpulsepowercapabilitywitha10/1000μs waveform ●Lowincrementalsurgeresistance,excellentclamping capability ●Veryfastre

IPB60R040C7

Marking：60C7040；Package：PG-TO263；600V CoolMOS짧 C7 Power Transistor

IPB60R060C7

Marking：60C7060；Package：PG-TO263；CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

IPB60R099C7

Marking：60C7099；Package：PG-TO263；600V CoolMOS짧 C7 Power Transistor