丝印：60F1414A；Package：PG-TIQFN-28-1；200 m / 600 V GaN half-bridge with fast accurate isolated gate drivers

Features • Two 200 m GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers Source / sink driving current up to 1 / 2 A Application- configurable turn-on and turn-off speed • Fast input-to-output propagation (typ. 47 ns) with extremely small chann

文件：1.27016 Mbytes 页数：35 Pages

Infineon

英飞凌

丝印：60F1414A；Package：PG-TIQFN-28-18x8mm；140 ㏁ / 600 V GaN half-bridge with fast accurate isolated gate drivers

Features • Two 140 ㏁ GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers Source / sink driving current up to 1 / 2 A Application-configurable turn-on and turn-off speed • Fast input-to-output propagation (typ. 47 ns) with extremely small channel-

文件：1.62837 Mbytes 页数：34 Pages

Infineon

英飞凌