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IPDQ60T022S7

Marking:60I022S7;Package:PG-HDSOP-22;MOSFET 600V CoolMOSª SJ S7 Power Device

Features •Optimizedpriceperformanceinlow-frequencyswitchingapplications •Highpulsecurrentcapability •Seamlessdiagnosticsatthelowestsystemcost •Temperaturesensefeatureforprotectionandoptimizedthermaldevice utilizationcost Benefits •Reductionofexternalsensing

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPQC60T022S7

Marking:60I022S7;Package:PG-HDSOP-22;MOSFET 600V CoolMOSª SJ S7 Power Device

Features •Optimizedpriceperformanceinlow-frequencyswitchingapplications •Highpulsecurrentcapability •Seamlessdiagnosticsatthelowestsystemcost •Temperaturesensefeatureforprotectionandoptimizedthermaldevice utilizationcost Benefits •Reductionofexternalsensing

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPT60T022S7

Marking:60I022S7;Package:PG-HSOF-8;MOSFET 600V CoolMOSª SJ S7 Power Device

Features •CoolMOS™S7technologyenableslowestRDS(on)inthesmallest footprint •Optimizedpriceperformanceinlow-frequencyswitchingapplications •Highpulsecurrentcapability •Seamlessdiagnosticsatthelowestsystem •Temperaturesensefeatureforprotectionandoptimizedtherma

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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