型号：1.5SMC600A；Package：DO-214AB；Transient Voltage Suppressors (TVS) Data Sheet

Features ■For surface mounted applications in order to optimize board space ■Low profile package ■Built in strain relief ■Glass p assivated j unction ■Low inductance ■Excellent clamping capability ■150 0W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0

文件：1.4662 Mbytes 页数：7 Pages

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

型号：1.5SMC600A；Package：SMC；Transient Voltage Suppressors

Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 1500 W Features ● Glass passivated chip ● 1500 W peak pulse power capability with a 10/1000 ȝs waveform, repetitive rate (duty cycle):0.01 ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast respo

文件：2.20141 Mbytes 页数：3 Pages

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

型号：1.5SMC600A；Transient Voltage Suppressors

Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 1500 W Features ● Glass passivated chip ● 1500 W peak pulse power capability with a 10/1000 ȝs waveform, repetitive rate (duty cycle):0.01 ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast respo

文件：2.20141 Mbytes 页数：3 Pages

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

型号：1.5SMC600A；Package：DO-214AB；6.8 To 600V 1500W Surface Mount Transient Voltage Suppressors (TVS)

Features A For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability 1500W Peak power capability at 10 × 1000μs waveform Repetition rate (duty cycle):0.01 Fast response t

文件：3.69055 Mbytes 页数：7 Pages

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

型号：1.5SMC600CA；Package：DO-214AB；Transient Voltage Suppressors

Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 1500 W Features ● Glass passivated chip ● 1500 W peak pulse power capability with a 10/1000 ȝs waveform, repetitive rate (duty cycle):0.01 ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast respo

文件：2.20141 Mbytes 页数：3 Pages

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

型号：1.5SMC600CA；Transient Voltage Suppressors

Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 1500 W Features ● Glass passivated chip ● 1500 W peak pulse power capability with a 10/1000 ȝs waveform, repetitive rate (duty cycle):0.01 ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast respo

文件：2.20141 Mbytes 页数：3 Pages

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

型号：1.5SMC600CA；Package：DO-214AB；6.8 To 600V 1500W Surface Mount Transient Voltage Suppressors (TVS)

Features A For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability 1500W Peak power capability at 10 × 1000μs waveform Repetition rate (duty cycle):0.01 Fast response t

文件：3.69055 Mbytes 页数：7 Pages

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

型号：86004BG-01LF；Package：TSSOP；62.5MHz to 250MHz, 1:4 LVCMOS/ LVTTL Zero Delay Clock Buffer

FEATURES • Four LVCMOS/LVTTL outputs, 7Ω typical output impedance • Single LVCMOS/LVTTL clock input • CLK accepts the following input levels: LVCMOS or LVTTL • Output frequency range: 62.5MHz to 250MHz • Input frequency range: 62.5MHz to 250MHz • External feedback for “zero delay” clock rege

文件：155.56 Kbytes 页数：12 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

型号：86004BG-01LFT；Package：TSSOP；62.5MHz to 250MHz, 1:4 LVCMOS/ LVTTL Zero Delay Clock Buffer

FEATURES • Four LVCMOS/LVTTL outputs, 7Ω typical output impedance • Single LVCMOS/LVTTL clock input • CLK accepts the following input levels: LVCMOS or LVTTL • Output frequency range: 62.5MHz to 250MHz • Input frequency range: 62.5MHz to 250MHz • External feedback for “zero delay” clock rege

文件：155.56 Kbytes 页数：12 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

型号：DMN6075SQ；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench technolo gy to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. DMN6075SQ General Features VDS = 60V ID =3A RDS(ON)

文件：1.92812 Mbytes 页数：5 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司