丝印：4N60；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.9839 Mbytes 页数：11 Pages

RECTRON

丽正

丝印：4N60；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.9839 Mbytes 页数：11 Pages

RECTRON

丽正

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

文件：36.81 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

文件：36.81 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

文件：36.81 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：890.05 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-channel I-PAK/D-PAK/TO-220F MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：946.27 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100 avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

文件：2.5004 Mbytes 页数：9 Pages

EVVOSEMI

翊欧

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

文件：2.5004 Mbytes 页数：9 Pages

EVVOSEMI

翊欧

N-channel power MOS tube

Features * VDS (V)=600V * RDS(ON) ≤ 2.4 (VGS = 10V) * ID=4.0A

文件：1.81615 Mbytes 页数：9 Pages

UMW

友台半导体