4N600中文资料etc未分类制造商数据手册PDF规格书
4N600规格书详情
VDSS = 600V
RDS (ON) = 1.9 Ω
ID = 4.0A
描述 Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.
特性 Features
• Critical DC Electrical parameters specified at elevated Temp.
• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser
• Super high density cell design for extremely low RDS(ON)
产品属性
- 型号：
4N600
- 功能描述：
N-Channel Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AM |
24+ |
NA/ |
5250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
士兰微 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
AM |
1229+ |
TO220F |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
REASUNOS |
1948+ |
TO-220F |
18562 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
士兰微 |
21+ |
TO-252 |
425300 |
询价 | |||
MOT |
97 |
50 |
公司优势库存 热卖中!! |
询价 | |||
AM |
21+ |
TO220F |
2000 |
原装现货假一赔十 |
询价 | ||
FAIRCHILD |
2023+ |
TO-251 |
58000 |
进口原装,现货热卖 |
询价 | ||
FAIRCHIL |
23+ |
TO-220塑封 |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
KTP |
2020+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
询价 |
