N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

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N-Channel Field Effect Transistor

VDSS = 600V\nRDS (ON) = 1.9 Ω\nID = 4.0ADescription\nThe Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast swi • Critical DC Electrical parameters specified at elevated Temp.\n• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser\n• Super high density cell design for extremely low RDS(ON)\n ;

BayLinear

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

文件：36.81 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

文件：36.81 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Field Effect Transistor

BayLinear