N-Channel Field Effect Transistor

VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits

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N-Channel Enhancement Mode MOSFET

文件：231.42 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode MOSFET

文件：295.4 Kbytes 页数：4 Pages

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