4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

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UTC

友顺

650V N-Channel Power MOSFET

Features RDS(ON)

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SY

顺烨电子

丝印：4N65AED；Package：TO-252；650V N-Channel Planar MOSFET

Features EMI and perfomance balanced Fast switching capability 100% avalanch tested Improved dv/dt capability

文件：5.37773 Mbytes 页数：9 Pages

SY

顺烨电子

650V N-Channel Planar MOSFET

Description 650V N-Channel Planar MOSFET 4N65 is high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device famil

文件：5.37773 Mbytes 页数：9 Pages

SHUNYE

顺烨电子

N-channel power MOS tube

Features * VDS (V)=650V * RDS(ON) ≤ 2.7 (VGS = 10V) * ID=4.0A

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UMW

友台半导体

MOSFET(N-Channel)

FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits

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EVVOSEMI

翊欧

N-channel power MOS tube

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UMW

友台半导体

Power MOSFET

文件：1.07616 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

650V N-Channel Power MOSFET

文件：2.82624 Mbytes 页数：10 Pages

DYELEC

迪一电子

Drain Current ID= 4A@ TC=25C

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ISC

无锡固电