4N600S中文资料etc未分类制造商数据手册PDF规格书
4N600S规格书详情
VDSS = 600V
RDS (ON) = 1.9 Ω
ID = 4.0A
描述 Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.
特性 Features
• Critical DC Electrical parameters specified at elevated Temp.
• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser
• Super high density cell design for extremely low RDS(ON)
产品属性
- 型号：
4N600S
- 功能描述：
N-Channel Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
97 |
50 |
公司优势库存 热卖中!! |
询价 | |||
KXIN |
22+ |
TO-220 |
35328 |
原装正品现货,可开13个点税 |
询价 | ||
LX |
23+ |
TO-220AB |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
士兰微 |
2406+ |
TO-252 |
71260 |
诚信经营!进口原装!量大价优! |
询价 | ||
REASUNOS |
1948+ |
TO-220F |
18562 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
FSC |
24+ |
TO252 |
663300 |
郑重承诺只做原装进口现货 |
询价 | ||
IR |
25+23+ |
TO-220 |
24944 |
绝对原装正品全新进口深圳现货 |
询价 | ||
UTC/友顺 |
24+ |
NA |
8000 |
只做原装，欢迎询价，量大价优 |
询价 | ||
IR |
23+ |
TO-220 |
7000 |
询价 | |||
KTP |
2020+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
询价 |
