丝印：4N60；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.9839 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：4N60；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.9839 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：4N60；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.9839 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：4N60；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：1.9839 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：4N60CAD；Package：TO-252-2L；4A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res

文件：411.7 Kbytes 页数：12 Pages

SILAN

士兰微

丝印：4N60CAMJ；Package：TO-251J-3L；4A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res

文件：411.7 Kbytes 页数：12 Pages

SILAN

士兰微

丝印：4N60CAMN；Package：TO-251N-3L；4A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res

文件：411.7 Kbytes 页数：12 Pages

SILAN

士兰微

丝印：4N60AT；Package：TO-220AB；4A 600V N-channel enhanced field effect transistor

文件：1.06546 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：4N60AF；Package：TO-220F；4A 600V N-channel enhanced field effect transistor

文件：1.06546 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：4N60AS；Package：TO-263；4A 600V N-channel enhanced field effect transistor

文件：1.06546 Mbytes 页数：7 Pages

YFWDIODE

佑风微