丝印：4N65；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

文件：1.96573 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：4N65；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

文件：1.96573 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：4N65；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

文件：1.96573 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：4N65；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

文件：1.96573 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：4N65AED；Package：TO-252；650V N-Channel Planar MOSFET

Features EMI and perfomance balanced Fast switching capability 100% avalanch tested Improved dv/dt capability

文件：5.37773 Mbytes 页数：9 Pages

SY

顺烨电子

丝印：4N65AEP；Package：TO-220；650V N-Channel Planar MOSFET

Features EMI and perfomance balanced Fast switching capability 100% avalanch tested Improved dv/dt capability

文件：5.37773 Mbytes 页数：9 Pages

SY

顺烨电子

丝印：4N65D；Package：TO-252；MOSFET

Features - Low RDS(ON). - Low gatecharge. - Low reverse transfer capacitances. - Fast switching.

文件：504.71 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：4N650；Package：TO-263；N-Channel Super Junction Power MOSFET

文件：967.12 Kbytes 页数：11 Pages

RECTRON

丽正国际

丝印：4N650；Package：TO-251；N-Channel Super Junction Power MOSFET

文件：641 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：4N650；Package：TO-252；N-Channel Super Junction Power MOSFET

文件：641 Kbytes 页数：9 Pages

RECTRON

丽正国际