744760047A

Marking：4N7；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

RM4N700DF

Marking：4N700；Package：DFN5X6-8L；N-Channel Super Junction Power MOSFET

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses Smallpackage UitraLowGateChargecauselowerdrivingrequirements 100%AvalancheTested ROHScompliant

RM4N700S4

Marking：4N700；Package：SOT-223-2L；N-Channel Super Junction Power MOSFET

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses. Smallpackage UltraLowGateChargecauselowerdrivingrequirements. 100%AvalancheTested ROHScompliant

RMP4N70IP

Marking：4N70；Package：TO-251；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest

RMP4N70LD

Marking：4N70；Package：TO-252；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest

RMP4N70T2

Marking：4N70；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest

RMP4N70TI

Marking：4N70；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest

RM4N700IP

Marking：4N700；Package：TO-251；N-Channel Super Junction Power MOSFET

RM4N700LD

Marking：4N700；Package：TO-252；N-Channel Super Junction Power MOSFET