丝印：4N60；Package：TO-220C；4A 600V N-channel Enhancement Mode Power MOSFET

Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. Features ● Fast Switching ● ESD Improved Capability ●

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WXDH

东海半导体

N-channel power MOS tube

Features * VDS (V)=600V * RDS(ON) ≤ 2.4 (VGS = 10V) * ID=4.0A

文件：1.81615 Mbytes 页数：9 Pages

UMW

友台半导体

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

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UTC

友顺

4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：397.76 Kbytes 页数：8 Pages

UTC

友顺

4A, 600V N-CHANNEL POWER MOSFET

文件：408.85 Kbytes 页数：9 Pages

UTC

友顺

4A, 600V N-CHANNEL POWER MOSFET

文件：376.13 Kbytes 页数：8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：432.12 Kbytes 页数：9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件：2.76231 Mbytes 页数：9 Pages

SUNMATE

森美特

4A mps,600 Volts N-CHANNEL MOSFET

文件：200.75 Kbytes 页数：2 Pages

CHONGQING

平伟实业

4 Amps竊?00Volts N-Channel MOSFET

文件：543.79 Kbytes 页数：5 Pages

ESTEK

伊泰克电子