丝印：3N；Package：DFN1006BD-2；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage

文件：228.46 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：3N；Package：DFN1006BD-2；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage

文件：228.69 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：3N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV  One Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications

文件：498.37 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：3N；Package：DSBGA；HDC1010 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1 Features 1• Relative Humidity Accuracy ±2% (typical) • Temperature Accuracy ±0.2°C (typical) • Excellent Stability at High Humidity • 14 Bit Measurement Resolution • 100 nA Sleep Mode Current • Average Supply Current: – 710 nA @ 1 sps, 11 bit RH Measurement – 1.3 μA @ 1 sps, 11 bit R

文件：1.00243 Mbytes 页数：29 Pages

TI

德州仪器

丝印：3N；Package：DSBGA；HDC1010 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1 Features 1• Relative Humidity Accuracy ±2% (typical) • Temperature Accuracy ±0.2°C (typical) • Excellent Stability at High Humidity • 14 Bit Measurement Resolution • 100 nA Sleep Mode Current • Average Supply Current: – 710 nA @ 1 sps, 11 bit RH Measurement – 1.3 μA @ 1 sps, 11 bit R

文件：1.00243 Mbytes 页数：29 Pages

TI

德州仪器

丝印：3N；Package：DSBGA；HDC1010 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1 Features 1• Relative Humidity Accuracy ±2% (typical) • Temperature Accuracy ±0.2°C (typical) • Excellent Stability at High Humidity • 14 Bit Measurement Resolution • 100 nA Sleep Mode Current • Average Supply Current: – 710 nA @ 1 sps, 11 bit RH Measurement – 1.3 μA @ 1 sps, 11 bit R

文件：1.00243 Mbytes 页数：29 Pages

TI

德州仪器

丝印：3N；Package：SOT-523；Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version

文件：207.99 Kbytes 页数：2 Pages

GWSEMI

唯圣电子

丝印：3N；Package：SOT-523；PNP Transistors

■ Features ● Epitaxial Planar Die Construction ● Also Available in Lead Free Version ● Complementary to MMBT3904T

文件：953.09 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：3N；Package：SOT-523；PNP General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available (MMBT3904T). ● Low Current (Max:-200mA). ● Low Voltage(Max:-40V). APPLICATIONS ● Ideal for medium power amplification and switching.

文件：167.54 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：3N；Package：DFN2020D-6；55V, 2A PNP/PNP low VCEsat (BISS) double transistor

1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Very low collector-emitter saturati

文件：284.78 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司