PBSS5255PAPS-Q中文资料安世数据手册PDF规格书

厂商型号	PBSS5255PAPS-Q
功能描述	55V, 2A PNP/PNP low VCEsat (BISS) double transistor
丝印标识	3N
封装外壳	DFN2020D-6
文件大小	284.78 Kbytes
页面数量	15 页
生产厂商	NEXPERIA Nexperia B.V. All rights reserved
中文名称	安世安世半导体(中国)有限公司
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-12 22:59:00
人工找货	PBSS5255PAPS-Q价格和库存，欢迎联系客服免费人工找货

1. General description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium

power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and

solderable side pads.

2. Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• Reduced Printed-Circuit Board (PCB) requirements

• Exposed heat sink for excellent thermal and electrical conductivity

• High energy efficiency due to less heat generation

• Suitable for Automatic Optical Inspection (AOI) of solder joints

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• LED lighting

• Power switches (e.g. motors, fans)