丝印：3N；Package：DFN2020D-6；55V, 2A PNP/PNP low VCEsat (BISS) double transistor

1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Very low collector-emitter saturati

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安世安世半导体(中国)有限公司

55V, 2A PNP/PNP low VCEsat (BISS) double transistor

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• High energy efficiency du;

Nexperia

安世

500mW ZENERS IN QFN 1.2x1.5 mm짼

文件：80.94 Kbytes 页数：3 Pages

PANJIT

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Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of 32 types with nominal working voltages from 3.3 to 75 V. FEATURES • Total power dissipation: max. 250 mW • Tolerance series: ±5 • Working voltage range: nom. 3.3 to 75 V • Non-repetiti

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PHI

飞利浦

Voltage regulator diodes

Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. FEATURES • Total power dissipation : max. 500 mW • Tolerance series:±5 • Working voltage range : nom. 3.0 to 75 V

文件：37.87 Kbytes 页数：7 Pages

PHI

飞利浦