丝印：30N65M5；Package：TO-220；N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.28182 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：30N65M5；Package：TO-247；N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.28182 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：30N80K5；Package：TO-247；N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5 Power MOSFET in a TO-247 package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：723.87 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：30ND07S；Package：SOP-8；LCE N-Channel Super Junction Power MOSFET

文件：898.53 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：30ND07S；Package：SOP-8；LCE N-Channel Super Junction Power MOSFET

文件：912.39 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：30ND07S；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

文件：361.76 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：30N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：318.35 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：30N100；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

文件：332.83 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：30N02；Package：TO-252；N-Ch Enhancement Mode Power MOSFET

文件：495.6 Kbytes 页数：4 Pages

SECOS

喜可士

丝印：30N10F7；Package：DPAK；N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a DPAK package

文件：1.06865 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体