Capacitive proximity sensors

文件：81.13 Kbytes 页数：1 Pages

IVO

堡盟电子

15TQ060

文件：326.02 Kbytes 页数：2 Pages

ISC

无锡固电

600V, SMPS II Series N-Channel IGBT

文件：259.31 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

3M FastbondTM

文件：524.66 Kbytes 页数：9 Pages

3M

Circuit Protection Solutions Low Voltage Fuse Links Catalogue

文件：4.91849 Mbytes 页数：55 Pages

COOPER

丝印：30N150；Package：PDFN33；Single N-channel Trench MOSFET 30V 15mΩ 29A

FEATURES • Trench power MOSFET technology • N-channel, logic level • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified APPLICATIONS • DC-DC Converter • Load Switch Applications

文件：646.7 Kbytes 页数：7 Pages

MGCHIP

丝印：30NP1812G；Package：DFN5X6-8L；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET

Description The NCE30NP1812G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 18A ● VDS = -30V,ID =- 12A RDS(ON)

文件：932.92 Kbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：30NP4030G；Package：DFN5X6-8L；NCE N&P-Channel complementary Power MOSFET

Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 40A ● VDS = -30V,ID =- 30A RDS(ON)

文件：418.85 Kbytes 页数：11 Pages

NCEPOWER

新洁能

丝印：30NC；Package：u8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuum

文件：212.12 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：30NG；Package：u8FL；MOSFET - Power, Single N-Channel, u8FL 100 V, 30 m, 35 A

Features • Wide SOA for Linear Mode Operation • Low RDS(on) to Minimize Conduction Losses • High Peak UIS Current Capability for Ruggedness • Small Footprint (3.3 x 3.3 mm) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications •

文件：278.67 Kbytes 页数：8 Pages

ONSEMI

安森美半导体