丝印：30N6LF6；Package：DPAK；Automotive-grade N-channel 60 V, 19 m廓 typ., 24 A STripFET??F6 Power MOSFET in a DPAK package

文件：447.27 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：30N65DM6；Package：TO-247；Automotive-grade N-channel 650 V, 90 m廓 typ., 28 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

文件：474.26 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

60V, 30A   N-CHANNEL   POWER MOSFET

The UTC 30N06 is a low voltage power MOSFET and is  designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotiveapplications in power supplies, high efficient DC • RDS(ON) = 40mΩ@VGS = 10 V \n• Ultra low gate charge ( typical 20nC )   \n• Low reverse transfer Capacitance ( CRSS = typical 80 pF ) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability;

UTC

友顺

60V, 30A N-CHANNEL POWER MOSFET

The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotiveapplications in power supplies, high efficient D • RDS(ON) = 40mΩ@VGS = 10 V, ID=15A \n• Ultra low gate charge ( typical 20nC )   \n• Low reverse transfer Capacitance ( CRSS = typical 80 pF ) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability;

UTC

友顺

场效应管(MOSFET)

TDSEMIC

拓电半导体

包装：散装 类别：胶带，粘合剂，材料 胶，粘合剂，敷料器 描述：3M FASTBOND CONTACT ADHESIVE 30N

3M

包装：散装 类别：胶带，粘合剂，材料 胶，粘合剂，敷料器 描述：FASTBOND CONTACT ADHESIVE 30NF G

3M

包装：散装 类别：胶带，粘合剂，材料 胶，粘合剂，敷料器 描述：FASTBOND CONTACT ADHESIVE 30NF G

3M