isc N-Channel MOSFET Transistor

FEATURES ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies,converters,AC and DC motor

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ISC

无锡固电

丝印：30N6LF6；Package：DPAK；Automotive-grade N-channel 60 V, 19 m廓 typ., 24 A STripFET??F6 Power MOSFET in a DPAK package

文件：447.27 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

汽车级N沟道60 V、19 mOhm典型值、24 A STripFET F6功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Designed for automotive applications and AEC-Q101 qualified \n• Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

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意法半导体

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TO-252

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