60V, 30A N-CHANNEL POWER MOSFET

The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotiveapplications in power supplies, high efficient D • RDS(ON) = 40mΩ@VGS = 10 V, ID=15A \n• Ultra low gate charge ( typical 20nC )   \n• Low reverse transfer Capacitance ( CRSS = typical 80 pF ) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability;

UTC

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N-CHANNEL POWER MOSFET

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UTC

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies,

文件：205.67 Kbytes 页数：6 Pages

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MOSFET

Features - Super low gate charge. - AEC-Q101 Qualified. - Advanced high cell density tench technology. - Excellent Cdv/ dt effect decline.

文件：525.27 Kbytes 页数：6 Pages

COMCHIP

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N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM30N06E uses advanced trench technology and design to provide excellent RDS(ON) with

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