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MTB30N06VL规格书详情
TMOS V™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM
TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density ofour
50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs, TMOSV is designed to with stand high energy in the avalanche and commutation modes.
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on)Technology
• Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSSand VDS(on)Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
产品属性
- 型号:
MTB30N06VL
- 制造商:
ON Semiconductor
- 功能描述:
Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) D2PAK Rail
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
NA/ |
13539 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ON/安森美 |
2022 |
TO-263-2 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ON |
2023+ |
TO-263 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
ON |
2018+ |
TO263 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
ON |
23+ |
NA |
20000 |
全新原装假一赔十 |
询价 | ||
ON/安森美 |
19+ |
6500 |
进口原装现货 |
询价 | |||
ON/ON Semiconductor/安森美/安 |
21+ |
TO-263 |
300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ON |
1105+ |
TO-263 |
298 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON/安森美 |
SOT263 |
15015 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ON |
22+23+ |
TO263 |
72992 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 |