RM30N100LD

Marking：30N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

BW-30N100W

N-TypeFixedAttenuator

IGW30N100T

LowLossIGBT:IGBTinTrenchStopandFieldstoptechnology

LowLossIGBT:IGBTinTrenchStop®andFieldstoptechnology •TrenchStop®andFieldstoptechnologyfor1000Vapplications offers: -lowVCEsat -verytightparameterdistribution -highruggedness,temperaturestablebehavior -positivetemperaturecoefficientinVCEsat •Designedf

IHW30N100R

HighSpeed2-Technology

•Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

IHW30N100R

SoftSwitchingSeries

IHW30N100R

ReverseConductingIGBTwithmonolithicbodydiode

IHW30N100T

LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnologywithanti-paralleldiode

IHW30N100T

SoftSwitchingSeries

IXFK30N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

IXFX30N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv