丝印：30N100；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =30A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation RDS(ON)

文件：362.66 Kbytes 页数：7 Pages

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丝印：30N100；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =30A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Halogen-free RDS(ON)

文件：727.27 Kbytes 页数：7 Pages

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丝印：30N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：318.35 Kbytes 页数：7 Pages

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丝印：30N100；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

文件：332.83 Kbytes 页数：7 Pages

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