| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：30N100；Package：TO-263；N-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=100V,ID=30A SpecialprocesstechnologyforhighESDcapability HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
Marking：30N100；Package：TO-247；N-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=100V,ID=30A SpecialprocesstechnologyforhighESDcapability HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation Halogen-free RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
Marking：30N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
Marking：30N100；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET | RECTRON Rectron Semiconductor | RECTRON |
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