High power PNP epitaxial planar bipolar transistor

Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. General features ■ High

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STMICROELECTRONICS

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High power PNP epitaxial planar bipolar transistor

This device is an PNP transistor manufactured using BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor exhibits good gain linearity behavior. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stages. High breakdown voltage VCEO = -140 V\nComplementary to 2STC4468\nTypical ft = 20 MHz\nFully characterized at 125 °C;

ST

意法半导体

Package：TO-3P-3，SC-65-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 140V 10A TO3P

STMICROELECTRONICS

意法半导体