High power PNP epitaxial planar bipolar transistor

Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Features ■ High breakdown voltage VCEO > -230V ■ Complementary to 2STC5200 ■ Fast-switching speed ■ Ty

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STMICROELECTRONICS

意法半导体

High power PNP epitaxial planar bipolar transistor

This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. High breakdown voltage V\nCEO > -230V\nFast-switching speed\nComplementary to 2STC5200\nTypical f\nT= 30MHz;

ST

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Package：TO-264-3，TO-264AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 230V 15A TO264

STMICROELECTRONICS

意法半导体