Low voltage fast-switching PNP power bipolar transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features ■ Very low collector-emitter saturation voltage ■ Hig

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STMICROELECTRONICS

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Low voltage fast-switching PNP power bipolar transistor

文件：204.88 Kbytes 页数：9 Pages

STMICROELECTRONICS

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低压快速切换PNP功率双极性晶体管

The device in a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. • Very low collector-emitter saturation voltage \n• Fast switching speed \n• High current gain characteristic \n• Surface mounting device in medium power SOT-223 package;

ST

意法半导体

Package：TO-261-4，TO-261AA；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 5A SOT223

STMICROELECTRONICS

意法半导体

Low voltage fast-switching PNP power bipolar transistor

Description The device in a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features ■ The device is qualified for automotive application

文件：203.95 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Low voltage fast-switching PNP power bipolar transistor

文件：204.88 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Low voltage fast-switching PNP power bipolar transistor

ST

意法半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 5A SOT223

STMICROELECTRONICS

意法半导体