Low voltage fast-switching NPN power transistor

Description The 2STR1215 is a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • H

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38 V, 10 W synchronous iso-buck converter for isolated applications

Features Designed for iso-buck topology 3.5 V to 38 V operating input voltage Primary output voltage regulation / no optocoupler required 4.5 A source / sink peak primary current capability Peak current mode architecture in forced PWM operation 390 ns blanking time 200 kHz to 1 MHz programm

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Low voltage fast-switching NPN power transistor

文件：140.54 Kbytes 页数：10 Pages

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低压快速切换NPN功率晶体管

The 2STR1215 is a NPN transistor manufactured using new \\\"PB-HCD\\\" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.\n\n The complementary PNP is the 2STR2215. • Very low collector-emitter saturation voltage \n• Fast switching speed \n• High current gain characteristic \n• Miniature SOT-23 plastic package for surface mounting circuits;

ST

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Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 15V 1.5A SOT23-3

STMICROELECTRONICS

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Low voltage fast-switching NPN power transistor

文件：140.54 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体