2STR2160

Low voltage fast-switching PNP power transistor

Description ThedeviceinaPNPtransistormanufacturedusingnew“PB-HCD”(powerbipolarhighcurrentdensity)technology.Theresultingtransistorshowsexceptionalhighgainperformancescoupledwithverylowsaturationvoltage. ThecomplementaryNPNisthe2STR1160. Features ■Verylowcol

2STR2160

低压快速切换PNP功率晶体管; • Very low collector-emitter saturation voltage \n• High current gain characteristic \n• Fast switching speed \n• Miniature SOT-23 plastic package for surface mounting circuits;

The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.\n\n The complementary NPN is the 2STR1160.\n\n

2STR2160

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 1A SOT23-3