Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

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STMICROELECTRONICS

意法半导体

低压快速切换PNP功率晶体管

The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. • Very low collector-emitter saturation voltage \n• High current gain characteristic \n• Fast switching speed \n• Miniature SOT-23 plastic package for surface mounting circuits;

ST

意法半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 1.5A SOT23-3

STMICROELECTRONICS

意法半导体