N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3717 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1400 µS TYP. (IDSS = 250 µA) • Includes diode and high resistance at G-S

文件：43.2 Kbytes 页数：4 Pages

NEC

瑞萨

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3718 is suitable for converter of ECM. FEATURES • Low noise NV = −117 dB TYP. (VDS = 4.5 V, C = 10 pF, RL = 1.0 kΩ) • Especially suitable for telephone, cellular phone & audio • Small package SC-89 (TUSM)

文件：111.91 Kbytes 页数：5 Pages

NEC

瑞萨

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3718 is suitable for converter of ECM. FEATURES • Low noise NV = −117 dB TYP. (VDS = 4.5 V, C = 10 pF, RL = 1.0 kΩ) • Especially suitable for telephone, cellular phone & audio • Small p

文件：244.69 Kbytes 页数：7 Pages

RENESAS

瑞萨

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3719 is suitable for converter of ECM. FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super thin thickness

文件：303.09 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3719 is suitable for converter of ECM. FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super thin thickness package t = 0.37 mm TYP.

文件：116.16 Kbytes 页数：5 Pages

NEC

瑞萨

N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications High breakdown voltage: VGDS= −40 V High input impedance: IGSS= −1.0 nA (max) (VGS= −30 V) Low RDS (ON): RDS (ON)= 20 Ω(typ.) (IDSS= 15 mA) Small package

文件：225.99 Kbytes 页数：4 Pages

TOSHIBA

东芝

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

文件：134.91 Kbytes 页数：1 Pages

TOSHIBA

东芝

FM Tuner, VHF-Band Amplifier Applications

FM Tuner, VHF-Band Amplifier Applications Features • Low noise. • High power gain. • Small reverse transfer capacitance.

文件：38.44 Kbytes 页数：4 Pages

SANYO

三洋

FM Tuner, VHF-Band Amplifier Applications

FM Tuner, VHF-Band Amplifier Applications Features • Low noise. • High power gain. • Small reverse transfer capacitance.

文件：33.46 Kbytes 页数：4 Pages

SANYO

三洋

N-channel Enhancement Mode MOSFET

Features ● Low on-resistance, low Qg ● High avalanche resistance ● For high-speed switching

文件：43.82 Kbytes 页数：2 Pages

KEXIN

科信电子