Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 3.3Ω(typ.) • High forward transfer admittance: |Yfs| = 1.6S (typ.) • Low leakage current: IDSS= 100μA (VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：323.34 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS Type Switching Regulator Applications

文件：217.29 Kbytes 页数：6 Pages

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Switching Regulator Applications

文件：199.5 Kbytes 页数：6 Pages

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Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 2 A \nPower Dissipation PD 25 W \nDrain-Source voltage VDSS 600 V ;

Toshiba

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Silicon N Channel MOS Type Switching Regulator Applications

文件：217.29 Kbytes 页数：6 Pages

TOSHIBA

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Switching Regulator Applications

文件：199.5 Kbytes 页数：6 Pages

TOSHIBA

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