2SK3817-DL-E技术资料参数供应商报价ONSEMI-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SK3817-DL-E	文件：300 bytes Page：1 Pages	MOSFET N-CH 60V 60A SMP-FD	ONSEMI 安森美半导体	ONSEMI
2SK3817L	文件：327.36 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：327.36 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
2SK3817S	文件：401.05 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：401.05 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
2SK3817	文件：44.37 Kbytes Page：4 Pages	N-Channel Silicon MOSFET General-Purpose Switching Device N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee. 文件：44.37 Kbytes 页数：4 Pages	SANYO 三洋	SANYO

更多2SK3817-DL-E供应商更新时间2026-1-22 23:00:00