MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltag

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low o

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SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low on-state resistance: RD

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NEC

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MOS Field Effect Transistor

Features • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low on-state resistance: RDS(on) = 0.83 MAX. (VGS = 10 V, ID = 5 A)

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KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low o

文件：289.97 Kbytes 页数：10 Pages

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SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low on-state resistance: RD

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NEC

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SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 25 A) • Low Ciss: Ciss = 32

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 25 A) •

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 6.0 mΩMAX. (VGS= 10 V, ID= 38 A) RDS(on)2= 9.5 mΩMAX. (VGS= 4 V, ID= 38 A) •Low C iss: C iss= 8400 pF TYP. •Bu

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NEC

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