MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A) •

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：323.7 Kbytes 页数：2 Pages

ISC

无锡固电

MOS Field Effect Transistor

MOS Field Effect Transistor Features Super low on-state resistance: RDS(on)1=6.5mÙMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mÙMAX.(VGS=4.5V,ID=30A) Low Ciss:Ciss = 2700 pF TYP. Built-in gate protection diode

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KEXIN

科信电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：399.1 Kbytes 页数：2 Pages

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无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

文件：247.2 Kbytes 页数：9 Pages

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SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 6.5 mΩMAX. (VGS= 10 V, ID= 30 A) RDS(on)2= 9.1 mΩMAX. (VGS= 4.5 V, ID= 30 A) •Low Ciss: Ciss= 2700 pF TYP.

文件：158.42 Kbytes 页数：7 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 6.5 mΩMAX. (VGS= 10 V, ID= 30 A) RDS(on)2= 9.1 mΩMAX. (VGS= 4.5 V, ID= 30 A) •Low Ciss: Ciss= 2700 pF TYP.

文件：158.42 Kbytes 页数：7 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

文件：247.2 Kbytes 页数：9 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：331.54 Kbytes 页数：2 Pages

ISC

无锡固电

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3717 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1400 μS TYP. (IDSS = 250 μA) • Includes diode and high resistance at G-S

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