TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 600 V) • Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

文件：89.29 Kbytes 页数：6 Pages

TOSHIBA

东芝

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10588 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

TOS

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TO-247

TOSHIBA

东芝

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TO-263

RENESAS 瑞萨

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