N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

For Low Noise Audio Amplifier Applications • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V)

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TOSHIBA

东芝

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON)= 2.0 Ω(typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 720 V) • Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

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TOSHIBA

东芝

DC / DC Converter Applications

DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.

文件：35.33 Kbytes 页数：4 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Avalanche resistance guarantee. • Pb-free type.

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SANYO

三洋

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=20mΩ (typ.) • 4V drive • Input capacitance Ciss=1780pF (typ.)

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SANYO

三洋

General-Purpose Switching Device Applications

N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter.

文件：43.72 Kbytes 页数：4 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：324.03 Kbytes 页数：2 Pages

ISC

无锡固电