N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

For Low Noise Audio Amplifier Applications • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA) • High breakdown voltage: VGDS = −40 V • Super low noise: NF = 1.0dB (typ.)

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TOSHIBA

东芝

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

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TOSHIBA

东芝

Built-in gate protection diode

Features ･ Low on-state resistance 5.0mΩ VGS=10V ･ Built-in gate protection diode ･ SMD PKG Applications ･ DC－ DC converter ･ Mortar drive

文件：647.05 Kbytes 页数：6 Pages

Sanken

三垦

Low on-resistance

■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching

文件：307.13 Kbytes 页数：9 Pages

Sanken

三垦

MOS Field Effect Transistor

Features High voltage: VDSS = 250 V Gate voltage rating: ± 30 V Low on-state resistance RDS(on) = 0.58Ω MAX. (VGS = 10 V, ID = 4.5 A) Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A) Built-in gate protection diode

文件：45.94 Kbytes 页数：1 Pages

KEXIN

科信电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 580mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：398.67 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltag

文件：251.05 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltage rating: ±30 V • Low on-stat

文件：166.77 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltage rating: ±30 V • Low on-stat

文件：166.77 Kbytes 页数：8 Pages

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 580mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：331.12 Kbytes 页数：2 Pages

ISC

无锡固电