2SK3712-Z中文资料瑞萨数据手册PDF规格书

DESCRIPTION

The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

FEATURES

• High voltage: VDSS = 250 V

• Gate voltage rating: ±30 V

• Low on-state resistance

RDS(on) = 0.58 Ω MAX. (VGS = 10 V, ID = 4.5 A)

• Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A)

• Built-in gate protection diode

• TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 250 V

Gate to Source Voltage (VDS = 0 V) VGSS ±30 V

Drain Current (DC) (TC = 25°C) ID(DC) ±9.0 A

Drain Current (pulse) Note1 ID(pulse) ±27 A

Total Power Dissipation (TC = 25°C) PT1 40 W

Total Power Dissipation (TA = 25°C) PT2 1.0 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg –55 to +150 °C

Single Avalanche Current Note2 IAS 9 A

Single Avalanche Energy Note2 EAS 8.1 mJ

Repetitive Avalanche Current Note3 IAR 9 A

Repetitive Pulse Avalanche Energy Note3 EAR 8.1 mJ