MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. FEATURES • Gate volta

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RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. FEATURES • Gate volta

文件：300.58 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. FEATURES • Gate voltage rating: ±30 V • Low on-state resistanc

文件：169.74 Kbytes 页数：8 Pages

NEC

瑞萨

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement model: Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：219.24 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.8 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N-Channel Power MOSFET

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Micaless package facilitating mounting • Avalanche resistance guarantee

文件：260.06 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

High-Voltage, High-Speed Switching Applications

High-Voltage, High-Speed Switching Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Micaless package facilitating mounting • Avalanche resistance guarantee

文件：46.11 Kbytes 页数：4 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：323.34 Kbytes 页数：2 Pages

ISC

无锡固电