Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.7 Kbytes 页数：9 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：46.57 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：88.07 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：88.07 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：48.56 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：88.62 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：88.62 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

文件：324.73 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：1.01255 Mbytes 页数：5 Pages

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杜因特

Silicon N Channel MOS FET High Speed Power Switching

文件：108.27 Kbytes 页数：10 Pages

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