SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on)= 0.4 Ω MAX.

文件：77.11 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-stat

文件：409.95 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features Gate voltage rating 30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A) Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available

文件：46.13 Kbytes 页数：1 Pages

KEXIN

科信电子

isc N-Channel MOSFET Transistor

文件：332.47 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on)= 0.4 Ω MAX.

文件：77.11 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-stat

文件：409.95 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-stat

文件：409.95 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on)= 0.4 Ω MAX.

文件：77.11 Kbytes 页数：8 Pages

NEC

瑞萨

isc N-Channel MOSFET Transistor

文件：400.56 Kbytes 页数：2 Pages

ISC

无锡固电