MOS Field Effect Transistor

Features • Directly driver by Ics having a 5V power source. • Has low on-satate resistance RDS(on)=1.00 MAX.@VGS=4.0V,ID=0.5A RDS(on)=0.65 MAX.@VGS=10V,ID=0.5A • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number o

文件：44.76 Kbytes 页数：1 Pages

KEXIN

科信电子

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：437.04 Kbytes 页数：6 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

文件：663.11 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.33 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：313.2 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

> Features - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers

文件：201.56 Kbytes 页数：2 Pages

Fuji

富士通

N-Channel MOS-FET(250V, 0.12Ohm, 30A, 150W)

> Features - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers

文件：206.58 Kbytes 页数：2 Pages

Fuji

富士通

Fast Switching Speed

DESCRIPTION • Drain Current –ID= 30A@ TC=25℃ • Drain Source Voltage- : VDSS=250V(Min) • Fast Switching Speed APPLICATIONS • high speed power switching

文件：68.56 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

> Features - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers

文件：189.31 Kbytes 页数：2 Pages

Fuji

富士通

Fast Switching Speed

DESCRIPTION • Drain Current –ID= 10A@ TC=25℃ • Drain Source Voltage- : VDSS=500V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching

文件：68.58 Kbytes 页数：2 Pages

ISC

无锡固电